Comment on Phonon modes in spontaneously ordered GaInP2 studied by micro-Raman scattering measurements
Identifieur interne : 010069 ( Main/Repository ); précédent : 010068; suivant : 010070Comment on Phonon modes in spontaneously ordered GaInP2 studied by micro-Raman scattering measurements
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Abstract
The Raman intensity of optical phonons of spontaneously ordered GaInP2 is analyzed using the bond polarizability model. The results are compared with experimental data and with the assignments of the ordering-induced phonons by Cheong [Phys. Rev. B 56, 1888 (1997)]. It is shown that the identification of the Raman band at 354 cm-1 as an ordering-induced A1 longitudinal mode polarized along the [111] direction for (001) right-angle scattering geometry, made by Cheong , is inconsistent with the Raman selection rules for GaInP2. It is shown that the 354-cm-1 Raman band can instead be attributed to phonons polarized along the [110] direction. Such phonons cannot exist in the perfectly ordered GaInP2 and can be attributed to the vibrations of the antiphase boundaries.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Comment on Phonon modes in spontaneously ordered GaInP<sub>2</sub> studied by micro-Raman scattering measurements </title><author><name sortKey="Mintairov, A M" uniqKey="Mintairov A">A. M. Mintairov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Electrical Engineering Department, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Ioffe Physical-Technical Institute RAS, 194021, Politechnicheskaya 26, St. Petersburg, Russia</s1></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>Ioffe Physical-Technical Institute RAS, 194021, Politechnicheskaya 26, St. Petersburg</wicri:regionArea><wicri:noRegion>St. Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Merz, J L" uniqKey="Merz J">J. L. Merz</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Electrical Engineering Department, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author><author><name sortKey="Vlasov, A S" uniqKey="Vlasov A">A. S. Vlasov</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Indiana</region></placeName><wicri:cityArea>Electrical Engineering Department, University of Notre Dame, Notre Dame</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">01-0302916</idno><date when="2001-06-15">2001-06-15</date><idno type="stanalyst">PASCAL 01-0302916 AIP</idno><idno type="RBID">Pascal:01-0302916</idno><idno type="wicri:Area/Main/Corpus">010F05</idno><idno type="wicri:Area/Main/Repository">010069</idno></publicationStmt><seriesStmt><idno type="ISSN">1098-0121</idno><title level="j" type="abbreviated">Phys. rev., B, Condens. matter mater. phys.</title><title level="j" type="main">Physical review. B, Condensed matter and materials physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Anti-phase boundaries</term><term>Experimental study</term><term>Gallium compounds</term><term>Indium compounds</term><term>Phonons</term><term>Raman spectra</term><term>Ternary semiconductors</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7820</term><term>7855C</term><term>6320</term><term>7830F</term><term>Etude théorique</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur ternaire</term><term>Phonon</term><term>Spectre Raman</term><term>Joint antiphase</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The Raman intensity of optical phonons of spontaneously ordered GaInP<sub>2</sub> is analyzed using the bond polarizability model. The results are compared with experimental data and with the assignments of the ordering-induced phonons by Cheong [Phys. Rev. B 56, 1888 (1997)]. It is shown that the identification of the Raman band at 354 cm-1 as an ordering-induced A<sub>1</sub> longitudinal mode polarized along the [111] direction for (001) right-angle scattering geometry, made by Cheong , is inconsistent with the Raman selection rules for GaInP<sub>2</sub>. It is shown that the 354-cm-1 Raman band can instead be attributed to phonons polarized along the [110] direction. Such phonons cannot exist in the perfectly ordered GaInP<sub>2</sub> and can be attributed to the vibrations of the antiphase boundaries.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1098-0121</s0></fA01><fA02 i1="01"><s0>PRBMDO</s0></fA02><fA03 i2="1"><s0>Phys. rev., B, Condens. matter mater. phys.</s0></fA03><fA05><s2>63</s2></fA05><fA06><s2>24</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Comment on Phonon modes in spontaneously ordered GaInP<sub>2</sub> studied by micro-Raman scattering measurements </s1></fA08><fA11 i1="01" i2="1"><s1>MINTAIROV (A. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>MERZ (J. L.)</s1></fA11><fA11 i1="03" i2="1"><s1>VLASOV (A. S.)</s1></fA11><fA14 i1="01"><s1>Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana 46556</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Ioffe Physical-Technical Institute RAS, 194021, Politechnicheskaya 26, St. Petersburg, Russia</s1></fA14><fA20><s2>247201-247201-3</s2></fA20><fA21><s1>2001-06-15</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>144 B</s2></fA43><fA44><s0>8100</s0><s1>© 2001 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>01-0302916</s0></fA47><fA60><s1>P</s1><s3>CT</s3></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physical review. B, Condensed matter and materials physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The Raman intensity of optical phonons of spontaneously ordered GaInP<sub>2</sub> is analyzed using the bond polarizability model. The results are compared with experimental data and with the assignments of the ordering-induced phonons by Cheong [Phys. Rev. B 56, 1888 (1997)]. It is shown that the identification of the Raman band at 354 cm-1 as an ordering-induced A<sub>1</sub> longitudinal mode polarized along the [111] direction for (001) right-angle scattering geometry, made by Cheong , is inconsistent with the Raman selection rules for GaInP<sub>2</sub>. It is shown that the 354-cm-1 Raman band can instead be attributed to phonons polarized along the [110] direction. Such phonons cannot exist in the perfectly ordered GaInP<sub>2</sub> and can be attributed to the vibrations of the antiphase boundaries.</s0> </fC01><fC02 i1="01" i2="3"><s0>001B70H20</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B60C20</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H30F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7820</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6320</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7830F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Etude théorique</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Theoretical study</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Semiconducteur ternaire</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Ternary semiconductors</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Phonon</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Phonons</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spectre Raman</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Raman spectra</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Joint antiphase</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Anti-phase boundaries</s0></fC03><fN21><s1>204</s1></fN21><fN47 i1="01" i2="1"><s0>0129M000672</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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